类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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NTJD1155LT1G | ON Semiconductor | 数据表 | 19125 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | ACTIVE (Last Updated: 20 hours ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 130mOhm | Tin (Sn) | 400mW | 鸥翼 | 260 | 630mA | 40 | NTJD1155 | 6 | Dual | 增强型MOSFET | 400mW | N and P-Channel | SWITCHING | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | 8V | N-CHANNEL AND P-CHANNEL | 1.3A | 1V | 1V | -8V | METAL-OXIDE SEMICONDUCTOR | Standard | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
NTJD5121NT1G | ON Semiconductor | 数据表 | 120031 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | 低阈值 | 266mW | 鸥翼 | NTJD5121N | 6 | Dual | 增强型MOSFET | 250W | 22 ns | 250mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 26pF @ 20V | 0.9nC @ 4.5V | 34ns | 60V | 32 ns | 295mA | 1.7V | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.7 V | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
FDME1024NZT | ON Semiconductor | 数据表 | 50000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | 6 | 25.2mg | SILICON | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | ESD PROTECTION | 1.4W | Dual | 增强型MOSFET | 1.3W | DRAIN | 4.5 ns | 600mW | 2 N-Channel (Dual) | SWITCHING | 66m Ω @ 3.4A, 4.5V | 1V @ 250μA | 300pF @ 10V | 4.2nC @ 4.5V | 2ns | 20V | 1.7 ns | 3.8A | 700mV | 8V | 3.4A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 40 pF | 500μm | 1.6mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | IPG20N06S2L50ATMA1 | Infineon Technologies | 数据表 | 42000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 15 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | OptiMOS™ | 活跃 | 1 (Unlimited) | EAR99 | 51W | FLAT | 未说明 | 未说明 | *PG20N06 | AEC-Q101 | R-PDSO-F | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 ns | 51W | 2 N-Channel (Dual) | 50m Ω @ 15A, 10V | 2V @ 19μA | 无卤素 | 560pF @ 25V | 17nC @ 10V | 3ns | 10 ns | 20A | 20V | 55V | 0.05Ohm | 60 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N04S4L11AATMA1 | Infineon Technologies | 数据表 | 450 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 逻辑电平兼容 | 41W | FLAT | 未说明 | not_compliant | 未说明 | R-PDSO-F6 | 增强型MOSFET | 41W | 2 N-Channel (Dual) | 11.6m Ω @ 17A, 10V | 2.2V @ 15μA | 无卤素 | 1990pF @ 25V | 26nC @ 10V | 20A | 16V | 40V | 0.0116Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
NVMD6N04R2G | ON Semiconductor | 数据表 | 5998 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 38 Weeks | ACTIVE (Last Updated: 15 hours ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | 150°C | -55°C | 1.29W | 未说明 | 未说明 | 8 | Dual | 2 N-Channel (Dual) | 34m Ω @ 5.8A, 10V | 3V @ 250μA | 900pF @ 32V | 30nC @ 10V | 40V | 4.6A | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2016UTS-13 | Diodes Incorporated | 数据表 | 2500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 157.991892mg | SILICON | 2 | 59.38 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 14.5mOhm | Matte Tin (Sn) | 880mW | 鸥翼 | DMN2016U | 8 | Dual | 增强型MOSFET | 880mW | 10.39 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 14.5m Ω @ 9.4A, 4.5V | 1V @ 250μA | 1495pF @ 10V | 16.5nC @ 4.5V | 11.66ns | 20V | 16.27 ns | 8.58A | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.025mm | 4.5mm | 3.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | BSO220N03MDGXUMA1 | Infineon Technologies | 数据表 | 485 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | OptiMOS™ | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | 鸥翼 | 未说明 | 未说明 | 8 | 不合格 | 增强型MOSFET | 1.4W | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 7.7A, 10V | 2.1V @ 250μA | 800pF @ 15V | 10nC @ 10V | 2.8ns | 30V | 6A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8667-TL-H | ON Semiconductor | 数据表 | 27 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | SILICON | 2 | 63 ns | 150°C TJ | Tape & Reel (TR) | 2010 | e6 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | 8 | Dual | 增强型MOSFET | 1.5W | 7.2 ns | 2 P-Channel (Dual) | 39m Ω @ 2.5A, 10V | 无卤素 | 600pF @ 10V | 13nC @ 10V | 23ns | 30V | 42 ns | 5.5A | 20V | 0.039Ohm | 30V | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900μm | 2.9mm | 2.3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
BSL306NH6327XTSA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 8.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | yes | Obsolete | 1 (Unlimited) | EAR99 | 500mW | 未说明 | 未说明 | 4.4 ns | 500mW | 2 N-Channel (Dual) | 57m Ω @ 2.3A, 10V | 2V @ 11μA | 无卤素 | 275pF @ 15V | 1.6nC @ 5V | 2.3ns | 1.4 ns | 2.3A | 20V | 30V | Logic Level Gate, 4.5V Drive | 1mm | 2.9mm | 1.6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDY4000CZ | ON Semiconductor | 数据表 | 30000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 32mg | SILICON | 600mA 350mA | 2 | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 700MOhm | 防静电 | 600V | 625mW | FLAT | 600mA | Dual | 增强型MOSFET | 625mW | 446mW | N and P-Channel | SWITCHING | 700m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 60pF @ 10V | 1.1nC @ 4.5V | 13ns | 20V | N-CHANNEL AND P-CHANNEL | 13 ns | 600mA | 600mV | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 500μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | AUIRF7342QTR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 43 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, HEXFET® | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 2W | 鸥翼 | Dual | 增强型MOSFET | 2W | 14 ns | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 3.4A, 10V | 3V @ 250μA | 690pF @ 25V | 38nC @ 10V | 10ns | 55V | 22 ns | 3.4A | -1V | 20V | 0.105Ohm | -55V | 114 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
NTJD4105CT1G | ON Semiconductor | 数据表 | 11743 In Stock | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | ACTIVE (Last Updated: 20 hours ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 630mA 775mA | 2 | 50 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 220mOhm | Tin (Sn) | 270mW | 鸥翼 | 260 | 630mA | 40 | NTJD4105C | 6 | Dual | 增强型MOSFET | 550mW | 83 ns | N and P-Channel | SWITCHING | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 23ns | 20V 8V | N-CHANNEL AND P-CHANNEL | 36 ns | 775mA | 920mV | 8V | -8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 920 mV | 5 pF | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
![]() | DMG6601LVT-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | Gold | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 26 | SILICON | 3.8A 2.5A | 2 | 18.3 ns | -55°C~150°C TJ | Cut Tape (CT) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 850mW | DUAL | 鸥翼 | 260 | 未说明 | DMG6601 | AEC-Q101 | R-PDSO-G6 | 2 | 增强型MOSFET | 850mW | 1.7 ns | N and P-Channel | SWITCHING | 55m Ω @ 3.4A, 10V | 1.5V @ 250μA | 422pF @ 15V | 12.3nC @ 10V | 4.6ns | N-CHANNEL AND P-CHANNEL | 2.2 ns | 2.5A | 12V | 3.8A | 0.055Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1mm | 2.9mm | 1.6mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
![]() | NTHD4102PT1G | ON Semiconductor | 数据表 | 228 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 8 hours ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | 4.535924g | SILICON | 2.9A | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 64MOhm | Tin (Sn) | 逻辑电平兼容 | -20V | 1.1W | C 弯管 | 260 | -7.3A | 40 | NTHD4102P | 8 | Dual | 增强型MOSFET | 1.1W | 5.5 ns | 2 P-Channel (Dual) | SWITCHING | 80m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 750pF @ 16V | 8.6nC @ 4.5V | 12ns | 20V | 12 ns | 4.1A | -1.5V | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.5 V | 1.1mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
![]() | IPG20N06S2L35AATMA1 | Infineon Technologies | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | PG-TDSON-8-10 | 2A Tc | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | 活跃 | 1 (Unlimited) | 175°C | -55°C | 65W | 65W | 65W | 2 N-Channel (Dual) | 35mOhm @ 15A, 10V | 2V @ 27μA | 无卤素 | 790pF @ 25V | 23nC @ 10V | 55V | 20A | 20V | 55V | 790pF | 逻辑电平门 | 28mOhm | 35 mΩ | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLJD3115PT1G | ON Semiconductor | 数据表 | 725 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 6-WDFN Exposed Pad | YES | 6 | SILICON | 2.3A | 2 | 19.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 100MOhm | 逻辑电平兼容 | -20V | 710mW | C 弯管 | 260 | -4.1A | 40 | NTLJD3115P | 6 | Dual | 增强型MOSFET | 1.5W | DRAIN | 6 ns | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 531pF @ 10V | 6.2nC @ 4.5V | 15ns | 15 ns | 3.3A | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 2mm | 2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | DMN3033LSD-13 | Diodes Incorporated | 数据表 | 700 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 850.995985mg | SILICON | 2 | 63 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 22mOhm | Matte Tin (Sn) | HIGH RELIABILITY | 2W | 鸥翼 | 260 | 40 | 8 | 增强型MOSFET | 2W | 11 ns | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 6.9A, 10V | 2.1V @ 250μA | 725pF @ 15V | 13nC @ 10V | 7ns | 30V | 30 ns | 6.9A | 20V | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5.3mm | 4.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | AUIRF7316QTR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 2W | 鸥翼 | Dual | 增强型MOSFET | 2W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 4.9A, 10V | 3V @ 250μA | 710pF @ 25V | 34nC @ 10V | 13ns | 30V | 32 ns | -4.9A | -1V | 20V | -30V | 30A | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2038LVTQ-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | YES | SILICON | 3.7A Ta 2.6A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | DUAL | 鸥翼 | 260 | 40 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 800mW Ta | N and P-Channel Complementary | SWITCHING | 35m Ω @ 4A, 4.5V, 74m Ω @ 3A, 4.5V | 1V @ 250μA | 530pF @ 10V 705pF @ 10V | 5.7nC @ 4.5V, 10nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 3.7A | 0.035Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.8V Drive | 100 pF | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG8842CZ | ON Semiconductor | 数据表 | 30 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 750mA 410mA | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 400MOhm | 300mW | 鸥翼 | 未说明 | 未说明 | 不合格 | Dual | 增强型MOSFET | 360mW | N and P-Channel | SWITCHING | 400m Ω @ 750mA, 4.5V | 1.5V @ 250μA | 120pF @ 10V | 1.44nC @ 4.5V | 16ns | 30V 25V | N-CHANNEL AND P-CHANNEL | 16 ns | 750mA | 1V | -8V | 0.75A | 25V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1mm | 2mm | 1.25mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | DMC3400SDW-7 | Diodes Incorporated | 数据表 | 52844 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SILICON | 650mA 450mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 310mW | DUAL | 鸥翼 | 260 | 30 | R-PDSO-G6 | 2 | 增强型MOSFET | 310mW | N and P-Channel | SWITCHING | 400m Ω @ 590mA, 10V | 1.6V @ 250μA | 55pF @ 15V | 1.4nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 450mA | 20V | 0.65A | 0.4Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 1.1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3021LSD-13 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 8.5A 7A | 50.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 2.5W | DUAL | 鸥翼 | 260 | 40 | DMC3021 | 8 | 增强型MOSFET | 2.5W | N and P-Channel | SWITCHING | 21m Ω @ 7A, 10V | 2.1V @ 250μA | 767pF @ 10V | 16.1nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 8.5A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | DMN3190LDW-7 | Diodes Incorporated | 数据表 | 61715 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | 30.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 320mW | 鸥翼 | 260 | 6 | AEC-Q101 | 2 | Dual | 增强型MOSFET | 4.5 ns | 2 N-Channel (Dual) | SWITCHING | 190m Ω @ 1.3A, 10V | 2.8V @ 250μA | 87pF @ 20V | 2nC @ 10V | 8.9ns | 30V | 15.6 ns | 1A | 20V | 1A | 0.19Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2.2mm | 1.35mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
FDS4559-F085 | ON Semiconductor | 数据表 | 18000 In Stock | - | 最小起订量: 1 最小包装量: 1 | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 4.5A 3.5A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | Automotive, AEC-Q101, PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | 2W | DUAL | 鸥翼 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 650pF @ 25V | 18nC @ 10V | 10ns | N-CHANNEL | 12 ns | 3.5A | 20V | 4.5A | 0.055Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 |
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